Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Voltage | 60 V |
Maximum Drain Source Resistance | 18 mΩ |
Minimum Gate Threshold Voltage | 2V |
Maximum Gate Source Voltage | -20 V, +20 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Transistor Configuration | Single |
Pin Count | 3 |
Channel Mode | Enhancement |
Category | Power MOSFET |
Maximum Power Dissipation | 190 W |
Transistor Material | Si |
Length | 10.41mm |
Dimensions | 10.41 x 4.7 x 9.01mm |
Typical Gate Charge @ Vgs | 110 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Typical Turn-Off Delay Time | 210 ns |
Width | 4.7mm |
Number of Elements per Chip | 1 |
Typical Turn-On Delay Time | 8.1 ns |
Minimum Operating Temperature | -55 °C |
Typical Input Capacitance @ Vds | 2400 pF@ 25 V |
Height | 9.01mm |